Review on the Designs and Characteristics of High-Electron Mobility Transistors

Subhadeep Mukhopadhyay; Sanjib Kalita

International Journal of Microwave Engineering and Technology

Review on the Designs and Characteristics of High-Electron Mobility Transistors

Subhadeep Mukhopadhyay
Sanjib Kalita

Abstract

Many authors have presented different physics based analytical models to manifest the characteristics of high electron mobility transistors (HEMTs). The designs of HEMTs are highly important to achieve sufficient efficiency. Conduction band engineering in HEMTs is the reason to generate a two-dimensional electron gas (2DEG) at the heterointerface. Microelectromechanical systems (MEMS) and microwave engineering are the relevant areas for the applications of HEMTs.

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Review on the Designs and Characteristics of High-Electron Mobility Transistors

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