3 publications
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Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nmBy Avrajyoti Dutta, Sanjib Kalita, Subhadeep Mukhopadhyay
Abstract: In this work, we have designed total 25 individual structures of AlGaN/GaN high electron mobility transistors (HEMTs). Variations in drain current are studied with the change in drain voltage. Also, variations in drain current are studied with the change in gate voltage. Further, variations in drain current are studied with the change in aluminium mole fraction. The amount of drain current is higher in HEMT of lower gate length. This …
Published in International Journal of Nanomaterials and Nanostructures · Vol. 6, Issue 1, 2020 · pp. 14–28 Read article →
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Studies on the Electrical Characteristics of Single-Heterojunction GaN based HEMTs with AlGaN Nano-Layer of 21 nmBy Avrajyoti Dutta, Sanjib Kalita, Subhadeep Mukhopadhyay
Abstract: In this work, we have studied the electrical characteristics of single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs). The effects of drain voltage and gate voltage on variations of drain current have studied on the basis of simulated HEMT structures. Also, we have studied the effects of aluminium mole fraction, gate length and doping concentration on variations of drain current based on the simulated HEMT structures. This present work will be …
Published in International Journal of Applied Nanotechnology · Vol. 5, Issue 2, 2019 · pp. 26–38 Read article →
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Review on the Designs and Characteristics of High-Electron Mobility TransistorsBy Subhadeep Mukhopadhyay, Sanjib Kalita
Abstract: Many authors have presented different physics based analytical models to manifest the characteristics of high electron mobility transistors (HEMTs). The designs of HEMTs are highly important to achieve sufficient efficiency. Conduction band engineering in HEMTs is the reason to generate a two-dimensional electron gas (2DEG) at the heterointerface. Microelectromechanical systems (MEMS) and microwave engineering are the relevant areas for the applications of HEMTs.
Published in International Journal of Microwave Engineering and Technology · Vol. 4, Issue 1, 2018 · pp. 20–41 Read article →