Leakage current
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Material to Scheme Designation of Flash Memory
Abstract: Subjective has been to study schemes of flash memory achieve from devised formation from magnetic metals. Scriptive has been adhered scopes from usual study matter on magnetic optic (MO) memories. Shallow trench isolation (STI) has been usual procure of grooves on prior allowed device area i.e., before forming IC device on wafer. From where oxidation layer has grown thus electrical separation has pursued in integrated circuit (IC) liable to generate …
Published in International Journal of Computer Aided Manufacturing · Vol. 7, Issue 2, 2021 · pp. 23–29 Read article
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High-k and Low-k Gate Dielectric Stacking for Low Voltage Organic Thin Film Transistors
Abstract: Electrical performance parameters of Organic thin film transistor (OTFT) are closely related to the interface characteristics of gate dielectric and organic semiconductor film. Henceforth, it becomes important to study the effect of gate dielectric stacking on device performance of OTFTs. In this paper, we demonstrate the stacking of high-k and low-k gate dielectric based Single and Dual gate OTFTs. The structural effect of Organic thin film transistors is methodically explored …
Published in International Journal of Applied Nanotechnology · Vol. 5, Issue 1, 2019 · pp. 1–7 Read article