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12 articles for “Leakage current”
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Material to Scheme Designation of Flash Memory
Abstract: Subjective has been to study schemes of flash memory achieve from devised formation from magnetic metals. Scriptive has been adhered scopes from usual study matter on magnetic optic (MO) memories. Shallow trench isolation (STI) has been usual procure of grooves on prior allowed device area i.e., before forming IC device on wafer. From where oxidation layer has grown thus electrical separation has pursued in integrated circuit (IC) liable to generate …
Published in International Journal of Computer Aided Manufacturing · Vol. 7, Issue 2, 2021 · pp. 23–29 Read article
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High-k and Low-k Gate Dielectric Stacking for Low Voltage Organic Thin Film Transistors
Abstract: Electrical performance parameters of Organic thin film transistor (OTFT) are closely related to the interface characteristics of gate dielectric and organic semiconductor film. Henceforth, it becomes important to study the effect of gate dielectric stacking on device performance of OTFTs. In this paper, we demonstrate the stacking of high-k and low-k gate dielectric based Single and Dual gate OTFTs. The structural effect of Organic thin film transistors is methodically explored …
Published in International Journal of Applied Nanotechnology · Vol. 5, Issue 1, 2019 · pp. 1–7 Read article
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High-Performance FinFET Based 8T SRAM with Enhanced Performance Parameters Using Self-Controllable Voltage level (SVL) Technique
Abstract: The scaling of standard single-gate bulk CMOS faces great challenge in the nanometer regime due to the severe short-channel effects (SCE) which causes significant increase in the leakage current. In this paper, a high-performance eight transistor (8T) SRAM has been proposed for reduction in leakage current and power consumption using double-gate FinFET with the proposed technique. Double gate FinFET has better SCEs performance compared to conventional CMOS. In this paper, …
Published in International Journal of Microelectronics and Digital integrated circuits · Vol. 5, Issue 1, 2019 · pp. 16–24 Read article
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A Overview on Reimagining MOSFET as Precision Thermal Sensor
Abstract: In the landscape of modern microelectronics, the transition from discrete sensing components to fully integrated silicon solutions have become a necessity for the advancement of the Internet of Things (IoT) and high-performance computing. This design explores the utilization of the MOSFET as a primary temperature-sensing transducer, leveraging its inherent thermal sensitivity rather than treating heat as a parasitic interference. By operating the MOSFET in the subthreshold (weak inversion) or saturation …
Published in International Journal of Analog Integrated Circuits · Vol. 12, Issue 1, 2026 · pp. 8–13 Read article
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A state of art design technique of broadband Active/Passive SPST switch using 130nm SiGe BiCMOS technology
Abstract: This paper presents the state of the art for new ultra-wideband active/passive RF SPST switches that can not only reduce insertion loss or potentially generate gain, but also significantly increase isolation. The proposed active/passive ultra-wideband RF SPST switch design using 130 nm SiGebased BiCMOS technology. This switch operates from 5 GHz to 45 GHz with high isolation and low gain/loss Two identical SPST switches and a broadband active balun make …
Published in International Journal of Broadband Cellular Communication · Vol. 8, Issue 1, 2022 · pp. 13–19 Read article
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STUDY AND IMPLEMENTATION OF INP MIS STRUCTURE AND GaAs FET DEVICES for ELECTRIC CONTROL APPLICATIONS.
Abstract: Compound semiconductors are well known for its high speed due to its higher mobility. Indium Phosphide and Gallium Arsenide are the compound semiconductor material considered in this paper for its study and characterization. Indium Phosphide MIS devices can be fabricated and its characteristics are studied. Here Indium Phosphide MIS capacitor is used as test vehicle for fabrication of other MIS devices. We noted down its breakdown voltage and leakage current. …
Published in International Journal of Microelectronics and Digital integrated circuits · Vol. 2, Issue 2, 2016 · pp. 25–31 Read article
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Reduction of Leakage Parameters in Novel 6CNT Schmitt Trigger Using LECTOR Technique
Abstract: This paper presents an overview of design optimization of leakage parameters in 6CNT Schmitt trigger using proposed power reduction technique. We use lector technique to reduce leakage parameter in the circuit. The simulation has been performed using H-spice software at 32nm technology. Schmitt trigger is used to convert analog signals to digital signals, i.e., it converts any kind of wave at input to square wave at output. Power Dissipation and …
Published in International Journal of Microelectronics and Digital integrated circuits · Vol. 5, Issue 1, 2019 · pp. 36–42 Read article
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Experimental evaluation of dc Conductivity of Rice Husk Reinforced Polypropylene Composites with addition of cenosphere
Abstract: Insulating materials are used in electrical power circuits to prevent leakages of current. Main objective of this study is to evaluate the dc conductivity of rice husk filled polypropylene composites with and without cenosphere. The conductivity at room temperature was found to decreases from 2.64e-13 to 9.371e-14 S cm-1 with the addition of cenosphere. Dense packing of the material, collapse of pores and decreases in air gap between the rice …
Published in International Journal of Composite Materials and Matrices · Vol. 1, Issue 1, 2015 · pp. 20–27 Read article
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Study of Groundwater and Surface Water Remediation
Abstract: Groundwater remediation is the process of treating contaminated groundwater by removing contaminants or converting them to harmless chemicals. Water that saturates the pore space in the subsurface and is located beneath the ground surface is known as groundwater. Between 25% and 40% of the world's drinking water comes from boreholes and dug wells. Farmers need groundwater to irrigate crops, while industry use it to make everyday items. Even though most …
Published in International Journal of Green Chemistry · Vol. 7, Issue 2, 2021 · pp. 21–26 Read article
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Design CMOS Low Power High Speed Digital 4-Bit Counter at 45 GPDK Technology
Abstract: The low power VLSI circuit is meant to reduce power consumption, chip size, and improve the system'sbattery life and performance. The scaling design, often known as a counter, is used to increase ordecrease the values of an operator based on its prior state. Frequency and time may be monitoredthroughout the counting process. The main issue with scaling circuits is power consumption caused bypower dissipation in the clock while it is …
Published in International Journal of Microwave Engineering and Technology · Vol. 9, Issue 1, 2023 · pp. 40–51 Read article
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A Sensor Integrated Tool for Cutting Force Monitoring in Gantry Milling to Improve Flatness and Surface Finish: Review Study
Abstract: AbstractPrecision machining of sector plates plays a vital role in the efficient functioning of Air Pre-Heaters(APH), which are integral components of thermal power plants. These plates are subjected to harshthermal cycles and mechanical loads, making dimensional accuracy critical. For optimal heatexchange performance and mechanical reliability, it is essential to maintain tight manufacturingtolerances – flatness within ±400 microns and thickness up to 13 mm. Deviation from theseparameters can lead to air …
Published in International Journal of Manufacturing and Materials Processing · Vol. 11, Issue 1, 2025 · pp. 25–45 Read article
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Review On Bipolar Plate Geometric Design and Materials for Proton Exchange Membrane Fuel Cell Applications
Abstract: Abstract Bipolar plates (BPs) are vital components in proton exchange membrane fuel cells (PEMFCs), performing multiple essential functions that directly influence system efficiency, durability, and overall operational performance. They ensure uniform distribution of reactant gases across the active area, provide electrical conductivity between adjacent cells, assist in effective thermal management by dissipating heat generated during electrochemical reactions, and maintain proper sealing to prevent leakage of gases and coolant. Among these …
Published in International Journal of I.C. Engines and Gas Turbines · Vol. 11, Issue 2, 2025 · pp. 40–56 Read article