Investigation and Performance of CNT-MOSFET Device Using Quantum-Based Modelling

E. N. Ganesh

International Journal of Microelectronics and Digital integrated circuits

Investigation and Performance of CNT-MOSFET Device Using Quantum-Based Modelling

E. N. Ganesh

Abstract

We propose a novel MOSFET design that embodies single wall zig-zag semiconducting carbon nanotubes (CNT) in the channel, as shown in Figure 1. Investigations show that CNTs have high low-field mobilities, which can be as great as 2×105 cm2/Vs. Thus, we predict that MOSFET performance can be improved by embedding CNTs in the channel. To investigate performance of the new CNT-MOSFET device, we develop a methodology that connects CNT modeling to MOSFET simulations. Our calculations indicate that by forming high mobility regions in channel, MOSFET performance can be boosted. The gain in the drive current is as much as 30–40% over standard MOSFETs. Our predictions are based on the calculations obtained from our CNT Monte Carlo (MC) simulator and quantum based device solver.

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Investigation and Performance of CNT-MOSFET Device Using Quantum-Based Modelling

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