3 publications
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A state of art design technique of broadband Active/Passive SPST switch using 130nm SiGe BiCMOS technologyBy Shib sankar singh, M.madhav Kumar, Divya Kumar Garg
Abstract: This paper presents the state of the art for new ultra-wideband active/passive RF SPST switches that can not only reduce insertion loss or potentially generate gain, but also significantly increase isolation. The proposed active/passive ultra-wideband RF SPST switch design using 130 nm SiGebased BiCMOS technology. This switch operates from 5 GHz to 45 GHz with high isolation and low gain/loss Two identical SPST switches and a broadband active balun make …
Published in International Journal of Broadband Cellular Communication · Vol. 8, Issue 1, 2022 · pp. 13–19 Read article →
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High frequency design approach and feasibility study of HBT based W-band (90.0GHz-100.0GHz) amplifier using 130nm SiGe based BiCMOS technologyBy Shib sankar singh, M.madhav Kumar, Divya Kumar Garg
Abstract: This paper present high frequency design approach and feasibility study of HBT (Hetero Junction Bipolar Transistor) based two stage cascode amplifiers at W-band (90.0GHz-100.0GHz). The proposed amplifier has design using 130nm SiGe based BiCMOS technology. This paper used low cost technology for designing of w-band amplifier and this is novelty of this paper. The schematic design and feasibility study has been carried out using Cadence software. The selection of active …
Published in International Journal of Digital Communication and Analog Signals · Vol. 7, Issue 2, 2021 · pp. 1–7 Read article →
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An efficient design approach of 5-bit digitally controlled phase shifter using 130nm SiGe based BiCMOS technology for Ka –band applicationsBy Shib sankar singh
Abstract: This paper present 5-bit digital controlled phase shifter using 130nm SiGe based BiCMOS technology. Three different approaches have used to achieve the desired phase shift with low insertion loss, accurate phase shift with good input and output return loss. The 180◦bit of phase shifter has design using switch network topology. Bridge-T network topology has used for designing of 22.5◦, 45◦ and 90◦.Band pass topology has used for designing of 11.25◦. …
Published in International Journal of Broadband Cellular Communication · Vol. 7, Issue 2, 2021 · pp. 7–13 Read article →