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Atomic Layer Etching and its CharacteristicBy R K Bhardwaj
Abstract: Atomic layer etching (ALE) is most advanced etching technique for removing thin layer of material at the atomic level using sequential reaction steps that are self limiting. ALE is thousand times faster as compared of approaches like Reactive ion etching (RIE) & others. ALE with thermal technique, the researchers fabricated 3-D transistors that are as narrow as 2.5 nanometers and more efficient than their commercial counterparts. Consider the etching approaches …
Published in International journal of Thermodynamics and Chemical Kinetics · Vol. 5, Issue 1, 2019 · pp. 45–56 Read article →