2 publications
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Published Subscription
A state of art design technique of broadband Active/Passive SPST switch using 130nm SiGe BiCMOS technologyBy Shib sankar singh, M.madhav Kumar, Divya Kumar Garg
Abstract: This paper presents the state of the art for new ultra-wideband active/passive RF SPST switches that can not only reduce insertion loss or potentially generate gain, but also significantly increase isolation. The proposed active/passive ultra-wideband RF SPST switch design using 130 nm SiGebased BiCMOS technology. This switch operates from 5 GHz to 45 GHz with high isolation and low gain/loss Two identical SPST switches and a broadband active balun make …
Published in International Journal of Broadband Cellular Communication · Vol. 8, Issue 1, 2022 · pp. 13–19 Read article →
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Published Subscription
High frequency design approach and feasibility study of HBT based W-band (90.0GHz-100.0GHz) amplifier using 130nm SiGe based BiCMOS technologyBy Shib sankar singh, M.madhav Kumar, Divya Kumar Garg
Abstract: This paper present high frequency design approach and feasibility study of HBT (Hetero Junction Bipolar Transistor) based two stage cascode amplifiers at W-band (90.0GHz-100.0GHz). The proposed amplifier has design using 130nm SiGe based BiCMOS technology. This paper used low cost technology for designing of w-band amplifier and this is novelty of this paper. The schematic design and feasibility study has been carried out using Cadence software. The selection of active …
Published in International Journal of Digital Communication and Analog Signals · Vol. 7, Issue 2, 2021 · pp. 1–7 Read article →